ACS_Nano Letters

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ACS_Nano Letters

June 8, 2022

Volume 22, Issue 11

Pages 4287-4616


Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method


The ultrathin and continuous ruthenium (Ru) film was deposited through an improved atomic layer deposition (ALD) process with a discrete feeding method (DFM), called DF-ALD, employing a cut-in purge step during the precursor feeding. The excess precursor molecules can be physically adsorbed onto the chemisorbed precursors on the substrate during precursor feeding, which screens the reactive sites on the surface. Using DF-ALD, surface coverage of precursors was enhanced because the cut-in purge removes the physisorbed precursors securing the reactive sites beneath them; thus, nucleation density was greatly increased. Therefore, the grain size decreased, which changed the microstructure and increased oxygen impurity concentration. However, a more metallic Ru thin film was formed due to thermodynamic stability and improved physical density. Consequently, DF-ALD enables the deposition of the ultrathin (3 nm) and continuous Ru film with a low resistivity of ∼60 μΩ cm and a high effective work function of ∼4.8 eV.


  • Ji Won Han
  • Hyun Soo Jin
  • Yoon Jeong Kim
  • Ji Sun Heo
  • Woo-Hee Kim
  • Ji-Hoon Ahn
  • Jeong Hwan Kim
  • Tae Joo Park



Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method | Nano Letters (acs.org)



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