ACS Applied Electronic Materials


ACS Applied Electronic Materials

June 22, 2021

Volume 3, Issue 6

Pages 2423-2831

Large-Area Bernal-Stacked Bilayer Graphene Film on a Uniformly Rough Cu Surface via Chemical Vapor Deposition

Herein, we introduced surface modification of a Cu catalyst by employing CH4 pre-annealing, which changed the uniformly rough Cu surface; this resulted in formation of high-quality and uniform Bernal-stacked bilayer graphene as well as monolayer graphene due to controlled synthesis time. A well-designed Cu surface was developed for synthesis of bilayer graphene with high coverage (>95%) and a high Bernal-stacking ratio (∼99%). Dual-gated transistors of Bernal-stacked bilayer graphene showed typical tunable transfer characteristics under varying gate voltages with carrier mobilities of 1000–2000 cm2 V–1 s–1. Through density functional theory calculations, we demonstrated that a uniformly rough Cu surface is favorable for synthesis of Bernal-stacked bilayer graphene. Finally, we employed bilayer graphene as a perfect diffusion barrier facilitated by complementing the diffusion pathway of numerous grain boundaries in graphene.

  • Myungwoo Son
  • Jaewon Jang
  • Gi-Hwan Kim
  • i-Hwan Lee
  • Dong Won Chun
  • Jee-Hwan Bae
  • In S. Kim
  • Moon-Ho Ham
  • Sang-Soo Chee

ACS Applied Electronic Materials | Vol 3, No 6

Image created by minjeong Kim / Nanosphere